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| MMBD3004SE SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode Features * Fast switching speed * High Conductance * High Reverse Breakdown Voltage Rating 3 1 2 Marking Code: "ZB" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Operating and Storage Temperature Range at t = 1 s at t = 1 s Symbol VRRM VRWM VR IF IFRM IFSM Pd Tj, Tstg Value 350 300 300 225 625 4 1 350 - 65 to + 150 Unit V V V mA mA A mW O C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 20 mA at IF = 100 mA at IF = 200 mA Reverse Current at VR = 240 V at VR = 240 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 A Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA , irr = 0.1 IR, RL = 100 Symbol VF Min. 350 Max. 0.87 1 1.25 100 100 5 50 Unit V IR V(BR)R CT trr nA A V pF ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2007 MMBD3004SE SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2007 |
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